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Gate Drive Transformer For IGBT , High Frequency Transformer
Gate dirve transformers for IGBT need to ensure excebehavior as well as safe galvanic separation betweer voltage side
Turns ratio: 1:1.2:1.2
Inductance: 1.4mH Typ.@100KHz
Leakage inductance: 0.3uH Ref@100KHz
Coupling capacitance: 12pF Pri to Sec
Power: 3W
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ABOUT US:
Shinhom Enterprise was founded in Xi'an China with nearly 20 years of experiencing of designing & manufacturing transformers & Coils components.
High quality, low cost and best service are what we pursuit most!
Meanwhile, the certification of ISO 9001 by SGS system was also earned.
Shinhom is to remain a specialist in designing and manufacturing high-performance transformers,power inductors, choke coils power supplies for purchasers around the world.